Dopant Selective Deep Reactive Ion Etching of 4H-SiC Wafer
Closed
Special notice
Open to all
NAICS 334413
| Agency | National Aeronautics and Space Administration |
| Contracting office | National Aeronautics and Space Administration |
| Place of performance | Cleveland, OH |
| Type of notice | Special notice |
| Set-aside | None, open to all businesses |
| Response deadline | Oct 16, 2026 |
| Posted | Oct 13, 2026 |
| Solicitation number | 80NSSC27946811Q |
| NAICS code | 334413, Semiconductor and Related Device Manufacturing |
Summary from the notice
NASA/NSSC has a requirement for Dopant Selective Deep Reactive Ion Etching of 4H-SiC Wafer. See attached SOW for full details of the requirement. VENDORS MUST REFERENCE THE NOTICE ID WHEN SUBMITTING A CAPABILITY STATEMENT. NOTE: Quotes received in response to this notice will NOT be considered and will not be evaluated by NASA’s Technical End User Team. We are currently only requesting Capability Statements.
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Details copied from the public SAM.gov notice. BidFox is not connected to SAM.gov or the U.S. Government, so check the official notice before you bid.